Diamond thin films with a thickness below 350 nm and with boron concentration ranging from 10 17 to 10 21 cm − 3 have been investigated. UV Raman spectroscopy and atomic force microscopy have been used to assess the quality and morphology of the diamond films. Hall-effect measurements confirmed the expected p-type conductivity.

Unlike other thin film deposition processes, conditions for diamond CVD have three unique features: high substrate temperature Ts, high gas pressure (P at 20–150Torr) (1Torr= 133.3 Pa), and low methane (CH 4) concentration of usually 1–5 % with respect to the dilution gas, hydrogen (H 2). For the source gas for diamond CVD, the possible ...

In this paper, we successfully synthesized homoepitaxial diamond with high quality and atomically flat surface by microwave plasma chemical vapor deposition. The sample presents a growth rate of 3 μm/h, the lowest RMS of 0.573 nm, and the narrowest XRD FWHM of 31.32 arcsec. An effect analysis was also applied to discuss the influence of methane concentration on the diamond substrates.

With increasing the carbon concentration during the film deposition, the diamond grain size is reduced and thus a smooth diamond film can be obtained. According to the data on the absorption coefficient in the wavelength range from 200 to 1100 nm, the optical gap of the NCD films decreases from 4.3 eV to 3.2 eV with increasing the carbon ...

A wide impurity doping range of p- and n-type diamond semiconductors will facilitate the development of various electronics. This study focused on producing n-type diamond with ultra-lightly impurity doping concentrations. N-type single-crystal diamond films were grown on (111)-oriented diamond substrates by phosphorus doping using the optimized doping conditions based on …

A study of texture in diamond films as functions of methane concentration during chemical vapor deposition and post-growth hydrogen treatment Volume 10, Issue 7 D. Ganesana (a1) and S.C. Sharma (a1)

The high quality films (k>17 W/cm K) exhibit at a given k (293 K) the exponent n very close to those for type IIa and type Ia crystals with low N content. However, the type Ia and CVD diamond with the same, but lower conductivity, have different n values (larger for the former). This is more pronounced for most defective samples, that is the ...

Diamond films were deposited by using methane and hydrogen as the gas source and utilizing the approach of chemical vapor deposition of microwave plasmas on the monocrystalline silicon piece. An analysis was also conducted to investigate the influence of methane concentration on the diamond film. When the methane concentration was set at 0.5%, the experiment turned out to have the high …

Boron-doped diamond films have been grown by the hot filament chemical vapor deposition process. The feed gas was a mixture of argon, bubbled through a solution of B2O3 in ethanol, and hydrogen. The highest growth rate was 0.7 μm/h. The boron concentration in the films depended on the concentration of B2O3 in the ethanol. The highest boron doping level, as measured by …

A study of texture in diamond films as functions of methane concentration during chemical vapor deposition and post-growth hydrogen treatment Volume 10, Issue 7 …

Spatial concentration and temperature distribution of CH radicals formed in a diamond thin-film hot-filament reactor U. Lommatzsch a, E.H. Wahl b, T.G. Owano b, C.H. Kruger b, R.N. Zare a,) a Department of Chemistry, Stanford Uni˝ersity, Stanford CA 94305-5080, USA b Department of Mechanical Engineering, Stanford Uni˝ersity, Stanford CA 94305 ...

The deposition rate for boron doped diamond films, decreases as the diborane concentration increases.more » As the temperature increases from 840 to 925 C, the film morphology changes from cubo-octahedron to cubic structures, while as the CH{sub 4} concentration increases from 0.5 to 1.0%, the morphology changes from triangular (111) faces ...

We investigate transport properties of ultrananocrystalline diamond films for a broad range of temperatures. Addition of nitrogen during plasma-assisted growth increases the conductivity of ultrananocrystalline diamond films by several orders of magnitude. We show that films produced at low concentration of nitrogen in the plasma are very resistive and electron transport occurs via a variable ...

Download Citation | Effect of methane concentration on diamond film texture | Diamond films was synthesized on a cemented carbide (YG6) substrate using the gaseous mixtures of …

How do you make a film about such incomprehensible events? Join and today we will be counting down our picks top 10 most important H...

Diamond and Graphite Diamond is composed of the single element carbon, and it is the arrangement of the C atoms in the lattice that give diamond its amazing properties.Compare the structure of diamond and graphite, both composed of just carbon. In diamond we have the hardest known material, in graphite we have one of the softest, simply by rearranging the way the atoms are bonded together.

whereas the corresponding value for the films grown with 1% methane concentration was ~1331.19 cm-1 regardless of their deposition temperature. This wavelength shift indicates the presence of a greater strain in the film deposited at a lower CH4 concentration than the other two diamond films. Although decreasing CH4 flow rate had a

Spatial concentration and temperature distribution of CH radicals formed in a diamond thin-film hot-filament reactor ... Spatial concentration and temperature distribution of CH radicals formed in a diamond thin-film hot-filament reactor. Download. Related Papers. Methyl radical measurement by cavity ring-down spectroscopy.

Applications of nitrogen-vacancy (NV) centers in diamond in quantum technology have attracted considerable attention in recent years. Deterministic generation of ensembles of NV centers can advance the research on quantum sensing, many-body quantum systems, multipartite entanglement, and so on. Here we report the complete process of controlled generation of NV centers in diamond as …

The effect of CCl 4 concentration on the nanocrystalline diamond (NCD) films deposition has been investigated in a hot-filament chemical vapor deposition (HFCVD) reactor. NCD films with a thickness of few-hundred nanometers have been synthesized on Si substrates from 2.0% and 2.5% CCl 4 /H 2 at a substrate temperature of 610 °C. Polycrystalline diamond films and nanowall-like films with ...

We used helium-induced hydrogen recoil analysis to determine the concentration of hydrogen versus the anneal temperature in r.f. plasma-deposited "diamond-like" carbon films. In addition, Rutherford backscattering combined with spectroscopic ellipsometry was used to determine simply, accurately and non-destructively the mass density of the films.

The boron-doped diamond films are grown using diborane in the feedgas at concentrations of 0-0.25 ppm, and are compared to those grown previously with 1-10 ppm. The boron acceptor concentration …

Defect formation during diamond homoepitaxial growth was sufficiently inhibited by adding oxygen simultaneously in the growth ambient with high concentration of 2%. A 30-μm thick diamond films with surface roughness of <2 nm were homoepitaxially deposited on the (100) diamond single crystal substrates with reasonable growth rate of approximately 3 μm h −1 under the conditions …

As-grown (100) homoepitaxial diamond films with boron concentrations [B] from 4.6 × 10 16 to 1.5 × 10 21 cm –3 have been analysed using X-ray photoelectron spectroscopy (XPS). Their C 1s core levels contain a dominant component around 284.17 ± 0.2 eV ascribed to sp 3 C and a main secondary component around 284.88 ± 0.2 eV ascribed to CH x (x ≥ 2) on surface defects.

It is found that both hydrogenated undoped and B-doped diamond films have high-concentration holes of ∼10 18 cm −3 at 297 K. These films exhibit little temperature dependence of the hole concentration between 120 and 400 K, while that of the oxidized B-doped film has a strong temperature dependence with an activation energy 0.38 eV.

The deposition of the diamond film on a substrate occurs via activation of molecular hydrogen and methane flowing over a hot-wire. The activation includes the dissociation of hydrogen and the formation of various C x H y species [3]. A complex series of gas- 2 phase and surface reactions lead to diamond …

OSTI.GOV Journal Article: High-quality and high-purity homoepitaxial diamond (100) film growth under high oxygen concentration condition

Diamond films were synthesized on Si substrate by electron-assisted chemical vapor deposition method using gas mixtures of methane (or acetone) and hydrogen. Various crystal structures of diamond films were obtained by synthesis with various deposition conditions. The influences of various deposition conditions on thermal conductivity of diamond film were studied.

Ar∕CH4∕H2 gas mixtures have been used to deposit nanocrystalline diamond (NCD) and ultrananocrystalline diamond (UNCD) films using hot filament (HF) chemical vapor deposition. The Ar:H2 concentration was maintained at Ar∕(H2+Ar)=80% while the CH4 concentration was varied over the range CH4∕(H2+CH4)=0.3–6.0. For higher methane concentrations, the filament became coated in …

It was found that the complex permittivity of the diamond films increased with an increase in the boron doping concentration and the diamond films were transformed from a microwave transparent material into a microwave absorbing material. In addition, although thermal conductivity decreased with increasing boron concentration, it remained at a ...

Diamond electronic devices fabricated using heavily doped hopping p + and n + layers Toshiharu Makino, Kazuhiro Oyama, Hiromitsu Kato et al.-Dependence of conduction mechanisms in heavily Al-doped 4H-SiC epilayers on Al concentration Hideharu Matsuura, Akinobu Takeshita, Tatsuya Imamura et al.-Electrical conduction in homoepitaxial, boron-doped ...

In this paper, we successfully synthesized homoepitaxial diamond with high quality and atomically flat surface by microwave plasma chemical vapor deposition. The sample presents a growth rate of 3 μm/h, the lowest RMS of 0.573 nm, and the narrowest XRD FWHM of 31.32 arcsec. An effect analysis was also applied to discuss the influence of methane concentration on the diamond substrates.

The lower the CH4 concentration and the higher the substrate tem- perature (lower than 1050), the lower the content of non- diamond carbon and the better the crystal shape, the denser the film, the bigger the grain size and the more perfect the crystal face and so the higher the resistivity and the initial oxidisation temperature.

Tc values of (111) diamond films are more than twice as high as those of (100) films at the equivalent boron concentration. The Tc of boron-doped (111) diamond increases as the boron content increases up to the maximum incorporated concentration and is agrees with the value estimated using McMillan's equation.

Ultra-nanocrystalline diamond films were prepared by a microwave plasma-enhanced chemical vapor deposition reactor using CH4/H2 gas mixture with a power as low as 650 W. The effects of CH4 concentration on nanostructure of the films and gas-phase species in plasma were investigated. The CH4 concentrations of 1.5%, 3.0%, 3.5%, and 4.0% were used and balanced with H2 to a total flow …